FDD8878 ,MOSFET, MOSFET Transistor - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

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100 points

Part No

FDD8878
Manufacturer

Fairchild
ChipWorker Part#

CW74174148
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

FDD8878 Series 30V 11A 15mOhm SMT N-Ch PowerTrench® MOSFET - TO-252AA
Documentation

Datasheet
Ships from

Moscow
Наличие

67842 pcs In Stock
Estimated Price

$ 0.35

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FDD8878 Specifications

Consulting Engineer >>

Attribute	Attribute Value

Part Number	FDD8878
Manufacturer	Fairchild
ChipWorker Part#	CW74174148
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	30.0 V
Current Rating	40.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.011 Ω
Polarity	N-Channel
Power Dissipation	40 W
Threshold Voltage	1.2 V
Input Capacitance	880 pF
Gate Charge	19.0 nC
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	40.0 A
Rise Time	79 ns
Input Capacitance (Ciss)	880pF @15V(Vds)
Input Power (Max)	40 W
Fall Time	27 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	40W (Tc)
	expand all
Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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Product Description

The FDD8878 is a N-channel MOSFET produced using Fairchild Semiconductor"s proprietary PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
High performance Trench technology for extremely low RDS (ON)
Low gate charge
High power and current handling capability

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