FDG6306P - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDG6306P
Manufacturer

Fairchild
ChipWorker Part#

CW16254400
Category

MOSFET, MOSFET Transistor
Package

SC-70-6
Description

Trans MOSFET P-CH 20V 0.6A 6Pin SC-70 T/R
Documentation

Datasheet

FDG6306P Global Supplier

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FDG6306P Specifications

Attribute	Attribute Value

Part Number	FDG6306P
Manufacturer	Fairchild
ChipWorker Part#	CW16254400
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SC-70-6
Voltage Rating (DC)	-20.0 V
Current Rating	-600 mA
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	0.3 Ω
Polarity	P-Channel
Power Dissipation	300 mW
Input Capacitance	114 pF
Gate Charge	1.40 nC
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Gate to Source)	±12.0 V
Continuous Drain Current (Ids)	600 mA
Rise Time	14 ns
Input Capacitance (Ciss)	114pF @10V(Vds)
Input Power (Max)	300 mW
Fall Time	1.7 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	0.3 W
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Size-Length	2 mm
Size-Width	1.25 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDG6306P is a dual P-channel MOSFET rugged gate version advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 to 12V). It is suitable for use with battery management and load switch applications.
Low gate charge
High performance Trench technology for extremely low RDS (ON)
Compact industry standard surface-mount-package
±12V Gate to source voltage
-0.6A Continuous drain current
-2A Pulsed drain current

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