IRF520NPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF520NPBF
Manufacturer

Infineon
ChipWorker Part#

CW1015796
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 100V 9.7A
Documentation

Datasheet

IRF520NPBF Global Supplier

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IRF520NPBF Specifications

Attribute	Attribute Value

Part Number	IRF520NPBF
Manufacturer	Infineon
ChipWorker Part#	CW1015796
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	48 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.2 Ω
Polarity	N-Channel
Power Dissipation	48 W
Threshold Voltage	4 V
Input Capacitance	330pF @25V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	9.7A
Rise Time	23 ns
Input Capacitance (Ciss)	330pF @25V(Vds)
Fall Time	23 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	48W (Tc)
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Size-Length	10.54 mm
Size-Width	4.69 mm
Size-Height	8.77 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF520NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Dynamic dv/dt rating
Fully avalanche rated
Advanced process technology

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