FDG6316P ,MOSFET, MOSFET Transistor - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

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108 points

Part No

FDG6316P
Manufacturer

Fairchild
ChipWorker Part#

CW50437503
Category

MOSFET, MOSFET Transistor
Package

SC-70-6
Description

Trans MOSFET P-CH 12V 0.7A 6Pin SC-70 T/R
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 0.09

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FDG6316P Specifications

Consulting Engineer >>

Attribute	Attribute Value

Part Number	FDG6316P
Manufacturer	Fairchild
ChipWorker Part#	CW50437503
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SC-70-6
Voltage Rating (DC)	-12.0 V
Current Rating	-700 mA
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	0.221 Ω
Polarity	P-Channel, Dual P-Channel
Power Dissipation	300 mW
Input Capacitance	146 pF
Gate Charge	1.70 nC
Drain to Source Voltage (Vds)	12 V
Breakdown Voltage (Drain to Source)	-12.0 V
Breakdown Voltage (Gate to Source)	±8.00 V
Continuous Drain Current (Ids)	-700 mA
Rise Time	13 ns
Input Capacitance (Ciss)	146pF @6V(Vds)
Input Power (Max)	300 mW
Fall Time	2 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	0.3 W
	expand all
Size-Length	2 mm
Size-Width	1.25 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99
HK STC License	NLR

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Product Description

The FDG6316P is a dual P-channel MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery management and load switch applications.
Low gate charge
High performance Trench technology for extremely low RDS (ON)
Compact industry standard surface-mount-package
±8V Gate to source voltage
-0.7A Continuous drain current
-1.8A Pulsed drain current

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