FDP55N06 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDP55N06
Manufacturer

ON Semiconductor
ChipWorker Part#

CW14679786
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

MOSFET N-CH 60V 55A TO-220
Documentation

Datasheet

FDP55N06 Global Supplier

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FDP55N06 Specifications

Attribute	Attribute Value

Part Number	FDP55N06
Manufacturer	ON Semiconductor
ChipWorker Part#	CW14679786
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.018 Ω
Power Dissipation	114 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	60 V
Rise Time	130 ns
Input Capacitance (Ciss)	1510pF @25V(Vds)
Input Power (Max)	114 W
Fall Time	95 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	114000 mW
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Product Lifecycle Status	Active
Packaging	Rail, Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

Product Description

The FDP55N06 is an UniFET™ N-channel High Voltage MOSFET produced based on Fairchild Semiconductor"s planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
100% Avalanche tested
30nC Typical low gate charge
60pF Typical low Crss

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