FDS3890 - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDS3890
Manufacturer

Fairchild
ChipWorker Part#

CW27645503
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

Trans MOSFET N-CH 80V 4.7A 8Pin SOIC N T/R
Documentation

Datasheet

FDS3890 Global Supplier

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FDS3890 Specifications

Attribute	Attribute Value

Part Number	FDS3890
Manufacturer	Fairchild
ChipWorker Part#	CW27645503
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Voltage Rating (DC)	80.0 V
Current Rating	4.70 A
Number of Channels	2 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.034 Ω
Polarity	Dual N-Channel
Power Dissipation	2 W
Threshold Voltage	2.3 V
Input Capacitance	1.18 nF
Gate Charge	25.0 nC
Drain to Source Voltage (Vds)	80 V
Breakdown Voltage (Drain to Source)	80 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	4.70 A
Rise Time	8 ns
Input Capacitance (Ciss)	1180pF @40V(Vds)
Input Power (Max)	900 mW
Fall Time	12 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.6 W
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Size-Length	4.9 mm
Size-Width	3.9 mm
Size-Height	1.575 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDS3890 is a PowerTrench® dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. This MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
Fast switching speed
High performance Trench technology for extremely low RDS (ON)
High power and current handling capability
±20V Gate to source voltage
4.7A Continuous drain current
20A Pulsed drain current

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