FDS3890 ,MOSFET, MOSFET Transistor - Fairchild
The pictures are for reference only, and the specific specifications can be found in the product manual.
Popularity Score
104 points
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Part NoFDS3890
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ManufacturerFairchild
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ChipWorker Part#CW27645503
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CategoryMOSFET, MOSFET Transistor
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PackageSOIC-8
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DescriptionTrans MOSFET N-CH 80V 4.7A 8Pin SOIC N T/R
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DocumentationDatasheet
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Ships fromMoscow
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НаличиеIn Stock
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Estimated Price$ 0.88
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FDS3890 Specifications
Consulting Engineer >>| Attribute | Attribute Value | |
|---|---|---|
| Part Number | FDS3890 | |
| Manufacturer | Fairchild | |
| ChipWorker Part# | CW27645503 | |
| Category | MOSFET, MOSFET Transistor | |
| Documentation | Datasheet | |
| Mounting Style | Surface Mount | |
| Number of Pins | 8 Pin | |
| Case/Package | SOIC-8 | |
| Voltage Rating (DC) | 80.0 V | |
| Current Rating | 4.70 A | |
| Number of Channels | 2 Channel | |
| Number of Positions | 8 Position | |
| Drain to Source Resistance (on) (Rds) | 0.034 Ω | |
| Polarity | Dual N-Channel | |
| Power Dissipation | 2 W | |
| Threshold Voltage | 2.3 V | |
| Input Capacitance | 1.18 nF | |
| Gate Charge | 25.0 nC | |
| Drain to Source Voltage (Vds) | 80 V | |
| Breakdown Voltage (Drain to Source) | 80 V | |
| Breakdown Voltage (Gate to Source) | ±20.0 V | |
| Continuous Drain Current (Ids) | 4.70 A | |
| Rise Time | 8 ns | |
| Input Capacitance (Ciss) | 1180pF @40V(Vds) | |
| Input Power (Max) | 900 mW | |
| Fall Time | 12 ns | |
| Operating Temperature (Max) | 175 ℃ | |
| Operating Temperature (Min) | -55 ℃ | |
| Power Dissipation (Max) | 1.6 W | |
| expand all | ||
| Size-Length | 4.9 mm | |
| Size-Width | 3.9 mm | |
| Size-Height | 1.575 mm | |
| Operating Temperature | -55℃ ~ 175℃ (TJ) | |
| Product Lifecycle Status | Active | |
| Packaging | Tape & Reel (TR) | |
| RoHS | RoHS Compliant | |
| Lead-Free Status | Lead Free | |
| REACH SVHC Compliance | No SVHC | |
| REACH SVHC Compliance Edition | 2015/06/15 | |
| ECCN Code | EAR99 |
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Product Description
- The FDS3890 is a PowerTrench® dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. This MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±20V Gate to source voltage
- 4.7A Continuous drain current
- 20A Pulsed drain current
Delivery
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