FDS6576 - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDS6576
Manufacturer

Fairchild
ChipWorker Part#

CW69175521
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

Trans MOSFET P-CH 20V 11A 8Pin SOIC N T/R
Documentation

Datasheet

FDS6576 Global Supplier

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FDS6576 Specifications

Attribute	Attribute Value

Part Number	FDS6576
Manufacturer	Fairchild
ChipWorker Part#	CW69175521
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Voltage Rating (DC)	-20.0 V
Current Rating	-11.0 A
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.014 Ω
Polarity	P-Channel
Power Dissipation	2.5 W
Input Capacitance	4.04 nF
Gate Charge	43.0 nC
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Drain to Source)	20.0 V
Breakdown Voltage (Gate to Source)	±12.0 V
Continuous Drain Current (Ids)	11.0 A
Rise Time	17 ns
Input Capacitance (Ciss)	4044pF @10V(Vds)
Input Power (Max)	1 W
Fall Time	79 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5 W
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDS6576 is a 2.5V specified P-channel MOSFET in a rugged gate version of Fairchild Semiconductor"s advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 to 12V). It can be used in load switch and battery protection.
Fast switching speed
High performance Trench technology for extremely low RDS (ON)
High power and current handling capability
43nC Typical low gate charge

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