FDS6900AS - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDS6900AS
Manufacturer

Fairchild
ChipWorker Part#

CW15657993
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

Trans MOSFET N-CH 30V 6.9A/8.2A 8Pin SOIC T/R
Documentation

Datasheet

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FDS6900AS Specifications

Attribute	Attribute Value

Part Number	FDS6900AS
Manufacturer	Fairchild
ChipWorker Part#	CW15657993
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Voltage Rating (DC)	30.0 V
Current Rating	8.20 A
Power Rating	1.6 W
Number of Channels	2 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	27 mΩ
Polarity	Dual N-Channel
Power Dissipation	2 W
Threshold Voltage	1.9 V
Input Capacitance	570 pF
Gate Charge	10.0 nC
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	6.90 A, 8.20 A
Rise Time	4 ns
Input Capacitance (Ciss)	600pF @15V(Vds)
Input Power (Max)	900 mW
Fall Time	3 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	5 mm
Size-Width	3.99 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDS6900AS is a 30V N-channel PowerTrench® SyncFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild"s the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild"s monolithic SyncFET technology. This product is general usage and suitable for many different applications.
Includes SyncFET Schottky body diode
High performance trench technology for extremely low RDS (on)
High power and current handling capability

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