FDT3612 ,MOSFET, MOSFET Transistor - Fairchild
The pictures are for reference only, and the specific specifications can be found in the product manual.
Popularity Score
97 points
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Part NoFDT3612
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ManufacturerFairchild
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ChipWorker Part#CW69175725
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CategoryMOSFET, MOSFET Transistor
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PackageTO-261-4
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DescriptionTrans MOSFET N-CH 100V 3.7A 4Pin(3+Tab) SOT-223 T/R
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DocumentationDatasheet
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Ships fromMoscow
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НаличиеIn Stock
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Estimated Price$ 1
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FDT3612 Specifications
Consulting Engineer >>| Attribute | Attribute Value | |
|---|---|---|
| Part Number | FDT3612 | |
| Manufacturer | Fairchild | |
| ChipWorker Part# | CW69175725 | |
| Category | MOSFET, MOSFET Transistor | |
| Documentation | Datasheet | |
| Mounting Style | Surface Mount | |
| Number of Pins | 3 Pin | |
| Case/Package | TO-261-4 | |
| Voltage Rating (DC) | 100 V | |
| Current Rating | 3.70 A | |
| Number of Positions | 3 Position | |
| Drain to Source Resistance (on) (Rds) | 120 mΩ | |
| Polarity | N-Channel | |
| Power Dissipation | 3 W | |
| Threshold Voltage | 2.5 V | |
| Input Capacitance | 632 pF | |
| Gate Charge | 14.0 nC | |
| Drain to Source Voltage (Vds) | 100 V | |
| Breakdown Voltage (Drain to Source) | 100 V | |
| Breakdown Voltage (Gate to Source) | ±20.0 V | |
| Continuous Drain Current (Ids) | 10.2 A | |
| Rise Time | 2 ns | |
| Input Capacitance (Ciss) | 632pF @50V(Vds) | |
| Input Power (Max) | 1.1 W | |
| Fall Time | 4.5 ns | |
| Operating Temperature (Max) | 150 ℃ | |
| Operating Temperature (Min) | -55 ℃ | |
| Power Dissipation (Max) | 3 W | |
| expand all | ||
| Size-Length | 6.5 mm | |
| Size-Width | 3.56 mm | |
| Size-Height | 1.6 mm | |
| Operating Temperature | -55℃ ~ 150℃ | |
| Product Lifecycle Status | Active | |
| Packaging | Tape & Reel (TR) | |
| RoHS | RoHS Compliant | |
| Lead-Free Status | Lead Free | |
| REACH SVHC Compliance | No SVHC | |
| REACH SVHC Compliance Edition | 2015/06/15 | |
| ECCN Code | EAR99 |
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Product Description
- The FDT3612 is a N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- 14nC Typical low gate charge
Delivery
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