FDT457N - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDT457N
Manufacturer

Fairchild
ChipWorker Part#

CW12844971
Category

MOSFET, MOSFET Transistor
Package

TO-261-4
Description

Trans MOSFET N-CH 30V 5A 4Pin(3+Tab) SOT-223 T/R
Documentation

Datasheet

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FDT457N Specifications

Attribute	Attribute Value

Part Number	FDT457N
Manufacturer	Fairchild
ChipWorker Part#	CW12844971
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Voltage Rating (DC)	30.0 V
Current Rating	5.00 A
Number of Channels	1 Channel
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	0.043 Ω
Polarity	N-Channel
Power Dissipation	3 W
Threshold Voltage	1.6 V
Input Capacitance	235 pF
Gate Charge	4.20 nC
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	5.00 A
Rise Time	12.0 ns
Input Capacitance (Ciss)	235pF @15V(Vds)
Input Power (Max)	1.1 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	3W (Ta)
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Size-Length	6.5 mm
Size-Width	3.56 mm
Size-Height	1.6 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDT457N is a 30V N-channel enhancement mode Field Effect Transistor produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. It is well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits and DC motor control. This product is general usage and suitable for many different applications.
High density cell design for extremely low RDS (ON)
High power and current handling capability
±20V Continuous gate source voltage (VGSS)
42°C/W Thermal resistance, junction to ambient
12°C/W Thermal resistance, junction to case

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