FGL60N100BNTD - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FGL60N100BNTD
Manufacturer

Fairchild
ChipWorker Part#

CW9474393
Category

IGBT Transistor, IGBT Module
Package

TO-264-3
Description

Trans IGBT Chip N-CH 1000V 60A 180000mW 3Pin(3+Tab) TO-264 Rail
Documentation

Datasheet

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FGL60N100BNTD Specifications

Attribute	Attribute Value

Part Number	FGL60N100BNTD
Manufacturer	Fairchild
ChipWorker Part#	CW9474393
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Voltage Rating (DC)	1.00 kV
Current Rating	60.0 A
Power Rating	180 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	180 W
Rise Time	320 ns
Breakdown Voltage (Collector to Emitter)	1000 V
Reverse recovery time	1.2 µs
Input Power (Max)	180 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	180000 mW
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Size-Length	20 mm
Size-Width	5 mm
Size-Height	26 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FGL60N100BNTD is a 1000V NPT Trench IGBT with high speed switching. It is in a non-punch through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability This product is general usage and suitable for many different applications.
Low saturation voltage
High input impedance
High speed switching
Built-in fast recovery diode

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