FP50R06W2E3 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FP50R06W2E3
Manufacturer

Infineon
ChipWorker Part#

CW179454222
Category

IGBT Transistor, IGBT Module
Package

Module
Description

Trans IGBT Module N-CH 600V 65A 175000mW 23Pin Tray
Documentation

Datasheet

FP50R06W2E3 Global Supplier

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FP50R06W2E3 Specifications

Attribute	Attribute Value

Part Number	FP50R06W2E3
Manufacturer	Infineon
ChipWorker Part#	CW179454222
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	23 Pin
Case/Package	Module
Power Rating	175 W
Polarity	N-Channel
Power Dissipation	175 W
Breakdown Voltage (Collector to Emitter)	600 V
Input Capacitance (Cies)	3.1nF @25V
Input Power (Max)	175 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	40 ℃
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Operating Temperature	-40℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status

Product Description

Summary of Features:
Low Switching Losses
Trench IGBT 3
V(CEsat) with positive Temperature Coefficient
Low V(CEsat)
Al(2)O(3) Substrate with Low Thermal Resistance
Compact Design
Solder Contact Technology
Rugged mounting due to integrated mounting clamps
Benefits:
Compact module concept
Optimized customer’s development cycle time and cost
Configuration flexibility

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Delivery

DHLPrice

UPS

FedEx

TNT

EMS

OCS

SF EXPRESS

Chipworker Certification

Ordering Information

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