FQA10N80C - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQA10N80C
Manufacturer

Fairchild
ChipWorker Part#

CW135707528
Category

MOSFET, MOSFET Transistor
Package

TO-3-3
Description

Trans MOSFET N-CH 800V 10A 3Pin(3+Tab) TO-3P Rail
Documentation

Datasheet

FQA10N80C Global Supplier

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FQA10N80C Specifications

Attribute	Attribute Value

Part Number	FQA10N80C
Manufacturer	Fairchild
ChipWorker Part#	CW135707528
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3-3
Voltage Rating (DC)	800 V
Current Rating	10.0 A
Drain to Source Resistance (on) (Rds)	1.10 Ω
Polarity	N-Channel
Power Dissipation	240W (Tc)
Drain to Source Voltage (Vds)	800 V
Breakdown Voltage (Drain to Source)	800 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	10.0 A
Input Capacitance (Ciss)	2800pF @25V(Vds)
Input Power (Max)	240 W
Power Dissipation (Max)	240W (Tc)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
Features
• 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant

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