FQD13N10TM - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQD13N10TM
Manufacturer

Fairchild
ChipWorker Part#

CW18043058
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

Trans MOSFET N-CH 100V 10A 3Pin(2+Tab) DPAK T/R
Documentation

Datasheet

FQD13N10TM Global Supplier

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FQD13N10TM Specifications

Attribute	Attribute Value

Part Number	FQD13N10TM
Manufacturer	Fairchild
ChipWorker Part#	CW18043058
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	100 V
Current Rating	10.0 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.142 Ω
Polarity	N-Channel
Power Dissipation	40 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Breakdown Voltage (Gate to Source)	±25.0 V
Continuous Drain Current (Ids)	10.0 A
Rise Time	55 ns
Input Capacitance (Ciss)	450pF @25V(Vds)
Input Power (Max)	2.5 W
Fall Time	25 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta), 40W (Tc)
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Size-Length	6.6 mm
Size-Width	6.1 mm
Size-Height	2.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
• 10 A, 100 V, RDS(on) = 180 mΩ (Max) @VGS = 10V, ID = 5.0 A
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 20 pF)
• 100% Avalanche Tested

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