FQD3P50 - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQD3P50
Manufacturer

Fairchild
ChipWorker Part#

CW232748417
Package

DPAK
Description

DPAK (TO-252)
Documentation

Datasheet

FQD3P50 Global Supplier

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FQD3P50 Specifications

Attribute	Attribute Value

Part Number	FQD3P50
Manufacturer	Fairchild
ChipWorker Part#	CW232748417
Documentation	Datasheet
Mounting Style	Surface Mount
Case/Package	DPAK
Polarity	P-CH
Drain to Source Voltage (Vds)	500 V
Continuous Drain Current (Ids)	2.1A
	expand all
Product Lifecycle Status	Unknown

Product Description

General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge.
Features
• -2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V
• Low gate charge ( typical 18 nC)
• Low Crss ( typical 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant

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Ordering Information

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- Carefully tested and packaged by ChipWorker
- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
- Income quality control (IQC), 800+ qualified distributors.
- Authorities test the chip to ensure the quality, authenticity and safety of your device.
- Decapsulation control
- X-ray inspection
- XRF inspection
- Electrical testing
- Surface testing

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