IRFL4310PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFL4310PBF
Manufacturer

Infineon
ChipWorker Part#

CW9663341
Category

MOSFET, MOSFET Transistor
Package

TO-261-4
Description

SOT-223 N-CH 100V 2.2A
Documentation

Datasheet

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IRFL4310PBF Specifications

Attribute	Attribute Value

Part Number	IRFL4310PBF
Manufacturer	Infineon
ChipWorker Part#	CW9663341
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Power Rating	2.1 W
Number of Channels	1 Channel
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	0.2 Ω
Polarity	N-CH
Power Dissipation	2.1 W
Threshold Voltage	2 V
Input Capacitance	330pF @25V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	2.2A
Rise Time	18 ns
Input Capacitance (Ciss)	330pF @25V(Vds)
Fall Time	20 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1W (Ta)
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.7 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFL4310PBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1W is possible in a typical surface-mount application.
Dynamic dV/dt rating
Ease of paralleling
Advanced process technology
Low static drain-to-source ON-resistance

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