FQP13N10L - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQP13N10L
Manufacturer

Fairchild
ChipWorker Part#

CW85514630
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

FQP13N10 Series 100V 0.18Ω Through Hole N-Channel Mosfet - TO-220
Documentation

Datasheet

FQP13N10L Global Supplier

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FQP13N10L Specifications

Attribute	Attribute Value

Part Number	FQP13N10L
Manufacturer	Fairchild
ChipWorker Part#	CW85514630
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	100 V
Current Rating	12.8 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.142 Ω
Polarity	N-Channel
Power Dissipation	65 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	12.8 A
Input Capacitance (Ciss)	520pF @25V(Vds)
Input Power (Max)	65 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	65W (Tc)
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Size-Length	10.1 mm
Size-Width	4.7 mm
Size-Height	9.4 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Rail, Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FQP13N10L is a QFET® N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
100% Avalanche tested
8.7nC Typical low gate charge
100pF Typical low Crss

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