IHW15N120R3 ,IGBT Transistor, IGBT Module - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

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139 points

Part No

IHW15N120R3
Manufacturer

Infineon
ChipWorker Part#

CW9492466
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 1200V 30A 254000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 0.81

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IHW15N120R3 Specifications

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Attribute	Attribute Value

Part Number	IHW15N120R3
Manufacturer	Infineon
ChipWorker Part#	CW9492466
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	254 W
Number of Positions	3 Position
Power Dissipation	254 W
Breakdown Voltage (Collector to Emitter)	1200 V
Input Power (Max)	254 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	254 W
	expand all
Size-Length	16.13 mm
Size-Width	5.21 mm
Size-Height	21.1 mm
Operating Temperature	-40℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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Product Description

The IHW15N120R3 is a 1200V Reverse Conducting IGBT with monolithic body diode. Powerful monolithic body diode with low forward voltage is designed for soft commutation only. TRENCHSTOP™ technology applications offers very tight parameter distribution and high ruggedness as well easy parallel switching capability due to positive temperature coefficient in VCE (sat). Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
Excellent quality
Lower EMI filtering requirements
JESD-022 Qualified
Lowest power dissipation
Better thermal management
Surge current capability
Highest reliability against peak currents

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