IKD10N60R - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IKD10N60R
Manufacturer

Infineon
ChipWorker Part#

CW109772797
Category

IGBT Transistor, IGBT Module
Package

TO-252-3
Description

Trans IGBT Module N-CH 600V 20A 3Pin(2+Tab) TO-252
Documentation

Datasheet

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IKD10N60R Specifications

Attribute	Attribute Value

Part Number	IKD10N60R
Manufacturer	Infineon
ChipWorker Part#	CW109772797
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	150 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	62 ns
Input Power (Max)	150 W
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Operating Temperature	-40℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Summary of Features:
Optimized parameters for up to 20% lower switching losses
Operating range of DC to 30kHz
Max junction temperature 175°C
Short circuit capability of 5µs
Very tight parameter distribution
Best in class current versus package size performance
Smooth switching performance leading to low EMI levels
Benefits:
Excellent cost/performance for hard switching applications
Outstanding temperature stability
Very good EMI behavior
Up to 60% space saving on the PCB
Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching

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