IKW50N65F5FKSA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IKW50N65F5FKSA1
Manufacturer

Infineon
ChipWorker Part#

CW11347996
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 650V 80A 305000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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IKW50N65F5FKSA1 Specifications

Attribute	Attribute Value

Part Number	IKW50N65F5FKSA1
Manufacturer	Infineon
ChipWorker Part#	CW11347996
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	305 W
Number of Positions	3 Position
Power Dissipation	305 W
Breakdown Voltage (Collector to Emitter)	650 V
Reverse recovery time	52 ns
Input Power (Max)	305 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	305000 mW
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Size-Length	16.13 mm
Size-Width	5.21 mm
Size-Height	21.1 mm
Operating Temperature	-40℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IKW50N65F5 is a High Speed IGBT in TRENCHSTOP™ 5 technology co-packed with RAPID 1 fast and soft anti-parallel diode. The TRENCHSTOP™ 5 IGBT technology redefines best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market"s high efficiency demands of tomorrow. It features best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability.
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
Low COES/EOSS
Mild positive temperature coefficient VCE (sat)
Temperature stability of Vf
Higher power density design
200mV Reduction in VCE (sat)
50V Increase in the bus voltage possible without compromising reliability
Green product
Halogen-free

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