IPB65R110CFDA - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPB65R110CFDA
Manufacturer

Infineon
ChipWorker Part#

CW133181463
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 650V 31.2A
Documentation

Datasheet

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IPB65R110CFDA Specifications

Attribute	Attribute Value

Part Number	IPB65R110CFDA
Manufacturer	Infineon
ChipWorker Part#	CW133181463
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Case/Package	TO-263-3
Polarity	N-CH
Power Dissipation	277.8 W
Drain to Source Voltage (Vds)	650 V
Continuous Drain Current (Ids)	31.2A
Rise Time	11 ns
Fall Time	6 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
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Size-Length	10 mm
Size-Width	9.25 mm
Size-Height	4.4 mm
Operating Temperature	-40℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Summary of Features:
First 650V automotive qualified technology with integrated fast body diode on the market
Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt
Low gate charge value Q g
Low Q rr at repetitive commutation on body diode & lowQ oss
Reduced turn on and turn of delay times
Compliant to AEC Q101 standard
Benefits:
Increased safety margin due to higher breakdown voltage
Reduced EMI appearance and easy to design in
Better light load efficiency
Lower switching losses
Higher switching frequency and/or higher duty cycle possible
High quality and reliability

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