IPD200N15N3 G - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPD200N15N3 G
Manufacturer

Infineon
ChipWorker Part#

CW13966460
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

The IPD200N15N3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS (on) of 40% and of 45% in Figure of Merit (FOM). The OptiMOS™ MOSFET offers high system efficiency and industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
Documentation

Datasheet

IPD200N15N3 G Global Supplier

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IPD200N15N3 G Specifications

Attribute	Attribute Value

Part Number	IPD200N15N3 G
Manufacturer	Infineon
ChipWorker Part#	CW13966460
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	16 mΩ
Polarity	N-Channel
Power Dissipation	150 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	150 V
Rise Time	11 ns
Input Capacitance (Ciss)	1820pF @75V(Vds)
Fall Time	6 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	150 W
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.41 mm
Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Summary of Features:
Excellent switching performance
World’s lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
RoHS compliant-halogen free
MSL1 rated 2
Benefits:
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products

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