IPD60N10S4L12ATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPD60N10S4L12ATMA1
Manufacturer

Infineon
ChipWorker Part#

CW3143536
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 100V 60A
Documentation

Datasheet

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IPD60N10S4L12ATMA1 Specifications

Attribute	Attribute Value

Part Number	IPD60N10S4L12ATMA1
Manufacturer	Infineon
ChipWorker Part#	CW3143536
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	9.8 mΩ
Polarity	N-CH
Power Dissipation	94 W
Threshold Voltage	1.6 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	60A
Rise Time	3 ns
Input Capacitance (Ciss)	3170pF @25V(Vds)
Fall Time	21 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	94W (Tc)
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Size-Length	6.5 mm
Size-Width	6.22 mm
Size-Height	2.3 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status

Product Description

Summary of Features:
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested
Benefits:
highest current capability 180A
low switching and conduction power losses for high thermal efficiency
robust packages with superior quality and reliability
optimized total gate charge enables smaller driver output stages

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