IPD60R180P7 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPD60R180P7
Manufacturer

Infineon
ChipWorker Part#

CW164502400
Description

N-CH 600V 18A 180mOhm DPAK
Documentation

Datasheet

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IPD60R180P7 Specifications

Attribute	Attribute Value

Part Number	IPD60R180P7
Manufacturer	Infineon
ChipWorker Part#	CW164502400
Documentation	Datasheet
Number of Pins	3 Pin
Case/Package	TO-252
Power Dissipation	72 W
Rise Time	12 ns
Input Capacitance (Ciss)	1081pF @400V(Vds)
Fall Time	8 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	72000 mW
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Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

Product Description

Description:
The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
Summary of Features:
**Efficiency**
600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G
**Ease-of-use**
Integrated ESD diode from 180mN and above R DS(on)s
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Benefits:
**Efficiency**
Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency
**Ease-of-use**
Ease-of-use in manufacturing environments by stopping ESD failures occurring
Integrated R G reduces MOSFET oscillation sensitivity
MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
Suitable for a wide variety of end applications and output powers
Parts available suitable for consumer and industrial applications

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