IPD60R1K4C6 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPD60R1K4C6
Manufacturer

Infineon
ChipWorker Part#

CW16830163
Category

MOSFET, MOSFET Transistor
RoHS

Lead free / RoHS Compliant
Description

DPAK N-CH 650V 3.2A
Documentation

Datasheet

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IPD60R1K4C6 Specifications

Attribute	Attribute Value

Part Number	IPD60R1K4C6
Manufacturer	Infineon
ChipWorker Part#	CW16830163
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1.26 Ω
Polarity	N-Channel
Power Dissipation	28.4 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	3.2A
Rise Time	7 ns
Input Capacitance (Ciss)	200pF @100V(Vds)
Input Power (Max)	28.4 W
Fall Time	20 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	28.4W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.41 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Discontinued at Digi-Key
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

N-Channel 600V 3.2A (Tc) 28.4W (Tc) Surface Mount PG-TO252-3

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