IPP037N08N3 G - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPP037N08N3 G
Manufacturer

Infineon
ChipWorker Part#

CW47024243
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

Trans MOSFET N-CH 80V 100A 3Pin(3+Tab) TO-220
Documentation

Datasheet

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IPP037N08N3 G Specifications

Attribute	Attribute Value

Part Number	IPP037N08N3 G
Manufacturer	Infineon
ChipWorker Part#	CW47024243
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0031 Ω
Polarity	N-Channel
Power Dissipation	214 W
Threshold Voltage	2.8 V
Drain to Source Voltage (Vds)	80 V
Rise Time	79 ns
Input Capacitance (Ciss)	8110pF @40V(Vds)
Input Power (Max)	214 W
Fall Time	14 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	214000 mW
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Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IPP037N08N3 G is a 80V N-channel Power MOSFET that offers highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). The OptiMOS™ MOSFET offers industry"s lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
Dual sided cooling
Low parasitic inductance
Low profile (<0.7mm)
Reduced switching and conduction losses
Superior thermal resistance

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