IPT012N08N5ATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPT012N08N5ATMA1
Manufacturer

Infineon
ChipWorker Part#

CW8995266
Category

MOSFET, MOSFET Transistor
Package

PG-HSOF-8-1
Description

HSOF N-CH 80V 300A
Documentation

Datasheet

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IPT012N08N5ATMA1 Specifications

Attribute	Attribute Value

Part Number	IPT012N08N5ATMA1
Manufacturer	Infineon
ChipWorker Part#	CW8995266
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	PG-HSOF-8-1
Power Rating	375 W
Number of Channels	1 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.001 Ω
Polarity	N-Channel
Power Dissipation	375 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	80 V
Continuous Drain Current (Ids)	300A
Rise Time	31 ns
Input Capacitance (Ciss)	17000pF @40V(Vds)
Input Power (Max)	375 W
Fall Time	30 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	375W (Tc)
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Size-Length	10.58 mm
Size-Width	10.1 mm
Size-Height	2.4 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

Summary of Features:
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
R DS(on) reduction of up to 44%
Benefits:
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Target Applications:
Telecom
Server
Solar
Low voltage drives
Light electric vehicles
Adapter

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