IPW60R060C7XKSA1 ,MOSFET, MOSFET Transistor - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

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77 points

Part No

IPW60R060C7XKSA1
Manufacturer

Infineon
ChipWorker Part#

CW63944661
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

N-CH 600V 35A
Documentation

Datasheet
Ships from

Moscow
Наличие

72 pcs In Stock
Estimated Price

$ 4.86

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IPW60R060C7XKSA1 Specifications

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Attribute	Attribute Value

Part Number	IPW60R060C7XKSA1
Manufacturer	Infineon
ChipWorker Part#	CW63944661
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.052 Ω
Polarity	N-CH
Power Dissipation	162 W
Threshold Voltage	3.5 V
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	35A
Rise Time	11 ns
Input Capacitance (Ciss)	2850pF @400V(Vds)
Fall Time	4 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	162W (Tc)
	expand all
Size-Length	16.13 mm
Size-Width	5.21 mm
Size-Height	21.1 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Similar & Replacement Parts

Product Description

Description:
The new 600V CoolMOS*™** C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies.
Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS*™** C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS **™** C7 Power MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.
**Technical eLearning available**
>Watch now
Summary of Features:
Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
Benefits:
Enables increasing switching frequency without loss in efficiency
Measure showing key parameter for light load and full load efficiency
Doubling the switching frequency will half the size of magnetic components
Smaller packages for same R DS(on)
Can be used in many more positions for both hard and soft switching topologies
Target Applications:
Server
Telecom
PC power
Solar
Industrial

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