IR2104SPBF ,FET Driver - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Popularity Score

146 points

Part No

IR2104SPBF
Manufacturer

Infineon
ChipWorker Part#

CW4553792
Category

FET Driver
Package

SOIC-8
Description

MOSFET DRVR 600V 0.36A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin SOIC
Documentation

Datasheet
Ships from

Moscow
Наличие

2455 pcs In Stock
Estimated Price

$ 1.48

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IR2104SPBF Specifications

Consulting Engineer >>

Attribute	Attribute Value

Part Number	IR2104SPBF
Manufacturer	Infineon
ChipWorker Part#	CW4553792
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	625 mW
Rise/Fall Time	100ns, 50ns
Number of Outputs	2 Output
Output Voltage	620 V
Output Current	210 mA
Number of Positions	8 Position
Power Dissipation	0.625 W
Quiescent Current	150 µA
Rise Time	100 ns
Fall Time	50 ns
Fall Time (Max)	90 ns
Fall Time (Max)	170 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	625 mW
Supply Voltage	10V ~ 20V
Supply Voltage (Max)	20 V
Supply Voltage (Min)	10 V
	expand all
Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Each
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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Product Description

The IR2104SPBF is a high voltage high speed power MOSFET and IGBT Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates from 10 to 600V.
Tolerant to negative transient voltage DV/DT Immune
Under-voltage lockout
Cross-conduction prevention logic
Internally set dead-time
High side output in phase with input
Shut down input turns OFF both channels
Matched propagation delay for both channels

expand all

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