IR2136SPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IR2136SPBF
Manufacturer

Infineon
ChipWorker Part#

CW5559830
Category

FET Driver
Package

SOIC-28
Description

MOSFET DRVR 600V 0.35A 6Out Hi/Lo Side 3-Phase Brdg Inv 28Pin SOIC W Tube
Documentation

Datasheet

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IR2136SPBF Specifications

Attribute	Attribute Value

Part Number	IR2136SPBF
Manufacturer	Infineon
ChipWorker Part#	CW5559830
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	28 Pin
Case/Package	SOIC-28
Supply Voltage (DC)	10.0V (min)
Rise/Fall Time	125ns, 50ns
Number of Outputs	6 Output
Output Voltage	620 V
Output Current	200 mA
Number of Positions	28 Position
Power Dissipation	1600 mW
Quiescent Current	1.6 mA
Rise Time	125 ns
Fall Time	50 ns
Fall Time (Max)	75 ns
Fall Time (Max)	190 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	1600 mW
Supply Voltage	10V ~ 20V
Supply Voltage (Max)	20 V
Supply Voltage (Min)	10 V
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Size-Length	18.1 mm
Size-Width	7.6 mm
Size-Height	2.35 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IR2136SPBF is a high voltage high speed power MOSFET and IGBT Bridge Driver with three independent high and low-side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3V logic. A current trip function which terminates all six outputs can be derived from an external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that an overcurrent or under-voltage shutdown has occurred. Overcurrent fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channels can be used to drive N-channel power MOSFETs/IGBTs in the high-side configuration which operates up to 600V.
Floating channel designed for bootstrap operation
Tolerant to negative transient voltage (dV/dt immune)
Under-voltage lockout for all channels
Overcurrent shutdown turns OFF all six drivers
Independent 3 half-bridge drivers
Matched propagation delay for all channels
Cross-conduction prevention logic
High-side outputs out of phase
3.3V Logic compatible
Lower di/dt gate drive for better noise immunity
Externally programmable delay for automatic fault clear

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