IRF540NPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF540NPBF
Manufacturer

Infineon
ChipWorker Part#

CW85320
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 100V 33A
Documentation

Datasheet

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IRF540NPBF Specifications

Attribute	Attribute Value

Part Number	IRF540NPBF
Manufacturer	Infineon
ChipWorker Part#	CW85320
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	140 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.044 Ω
Polarity	N-CH
Power Dissipation	130 W
Threshold Voltage	4 V
Input Capacitance	1960 pF
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	33A
Rise Time	35 ns
Input Capacitance (Ciss)	1960pF @25V(Vds)
Input Power (Max)	130 W
Fall Time	35 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	130000 mW
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Size-Length	10.54 mm
Size-Width	4.69 mm
Size-Height	8.77 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The IRF540NPBF from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
Drain to source voltage Vds is 100V
Gate to source voltage is ±20V
On resistance Rds(on) of 44mohm at Vgs of 10V
Power dissipation Pd of 130W at 25°C
Continuous drain current Id of 33A at Vgs 10V and 25°C
Operating junction temperature range from -55°C to 175°C

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