IRF620PBF ,MOSFET, MOSFET Transistor - VISHAY

The pictures are for reference only, and the specific specifications can be found in the product manual.

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149 points

Part No

IRF620PBF
Manufacturer

VISHAY
ChipWorker Part#

CW2373092
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220-3 N-CH 200V 5.2A 800mΩ
Documentation

Datasheet
Ships from

Moscow
Наличие

491 pcs In Stock
Estimated Price

$ 0.27

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IRF620PBF Specifications

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Attribute	Attribute Value

Part Number	IRF620PBF
Manufacturer	VISHAY
ChipWorker Part#	CW2373092
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	250 V
Current Rating	5.20 A
Power Rating	50 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	800 mΩ
Polarity	N-Channel
Power Dissipation	50 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	200 V
Breakdown Voltage (Drain to Source)	200 V
Continuous Drain Current (Ids)	5.20 A
Rise Time	22 ns
Input Capacitance (Ciss)	260pF @25V(Vds)
Input Power (Max)	50 W
Fall Time	13 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	50 W
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Size-Length	10.41 mm
Size-Width	4.7 mm
Size-Height	9.01 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
Minimum Packing Quantity	50
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

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Product Description

The IRF620PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
Dynamic dV/dt rating
Repetitive avalanche rated
Ease of paralleling
Simple drive requirements

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