IRF7424TRPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF7424TRPBF
Manufacturer

Infineon
ChipWorker Part#

CW2205923
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC P-CH 30V 11A
Documentation

Datasheet

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IRF7424TRPBF Specifications

Attribute	Attribute Value

Part Number	IRF7424TRPBF
Manufacturer	Infineon
ChipWorker Part#	CW2205923
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2.5 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0135 Ω
Polarity	P-CH
Power Dissipation	2.5 W
Threshold Voltage	2.5 V
Input Capacitance	4030 pF
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	11A
Rise Time	23 ns
Input Capacitance (Ciss)	4030pF @25V(Vds)
Input Power (Max)	2.5 W
Fall Time	76 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta)
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Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF7424TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve the extremely low ON-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. It has been modified through a customized lead-frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared or wave soldering technique.
Industry standard pin-out

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