IRF7468PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF7468PBF
Manufacturer

Infineon
ChipWorker Part#

CW12348263
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC N-CH 40V 9.4A
Documentation

Datasheet

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IRF7468PBF Specifications

Attribute	Attribute Value

Part Number	IRF7468PBF
Manufacturer	Infineon
ChipWorker Part#	CW12348263
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2.5 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0155 Ω
Polarity	N-Channel
Power Dissipation	2.5 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	40 V
Continuous Drain Current (Ids)	9.4A
Rise Time	2.3 ns
Input Capacitance (Ciss)	2460pF @20V(Vds)
Input Power (Max)	2.5 W
Fall Time	3.8 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF7468PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency DC-to-DC isolated converters with synchronous rectification for telecom use and high frequency buck converters.
Ultra-low gate impedance
Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
Dynamic dV/dt rating
Fast switching
Fully avalanche rating

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