IRF9530PBF ,MOSFET, MOSFET Transistor - Vishay Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

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66 points

Part No

IRF9530PBF
Manufacturer

Vishay Semiconductor
ChipWorker Part#

CW79940263
Category

MOSFET, MOSFET Transistor
Package

TO-220
Description

MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.3Ω; ID -12A; TO-220AB; PD 88W; VGS +/-20V
Documentation

Datasheet
Ships from

Moscow
Наличие

60788 pcs In Stock
Estimated Price

$ 0.43

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IRF9530PBF Specifications

Consulting Engineer >>

Attribute	Attribute Value

Part Number	IRF9530PBF
Manufacturer	Vishay Semiconductor
ChipWorker Part#	CW79940263
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220
Voltage Rating (DC)	-100 V
Current Rating	-12.0 A
Power Rating	88 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.3 Ω
Polarity	P-Channel
Power Dissipation	88 W
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	-12.0 A
Rise Time	52.0 ns
Input Capacitance (Ciss)	860pF @25V(Vds)
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	88000 mW
	expand all
Size-Length	10.41 mm
Size-Width	4.7 mm
Size-Height	9.01 mm
Operating Temperature	-55℃ ~ 175℃
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

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Product Description

The IRF9530PBF is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
Dynamic dV/dt rating
Repetitive avalanche rated
175°C Operating temperature
Easy to parallel
Simple drive requirement
Fast switching

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