IRFB3306PBF ,MOSFET, MOSFET Transistor - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

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157 points

Part No

IRFB3306PBF
Manufacturer

Infineon
ChipWorker Part#

CW1020196
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 60V 160A
Documentation

Datasheet
Ships from

Moscow
Наличие

1430 pcs In Stock
Estimated Price

$ 0.33

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IRFB3306PBF Specifications

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Attribute	Attribute Value

Part Number	IRFB3306PBF
Manufacturer	Infineon
ChipWorker Part#	CW1020196
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	230 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0042 Ω
Polarity	N-Channel
Power Dissipation	230 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Continuous Drain Current (Ids)	160A
Rise Time	76 ns
Input Capacitance (Ciss)	4520pF @50V(Vds)
Input Power (Max)	230 W
Fall Time	77 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	230W (Tc)
	expand all
Size-Length	10.66 mm
Size-Width	4.82 mm
Size-Height	9.02 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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Product Description

The IRFB3306PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and di/dt capability

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