IRFP7530PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFP7530PBF
Manufacturer

Infineon
ChipWorker Part#

CW8850810
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247AC N-CH 60V 281A
Documentation

Datasheet

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IRFP7530PBF Specifications

Attribute	Attribute Value

Part Number	IRFP7530PBF
Manufacturer	Infineon
ChipWorker Part#	CW8850810
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	341 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.00165 Ω
Polarity	N-Channel
Power Dissipation	341 W
Threshold Voltage	3.7 V
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	281A
Rise Time	141 ns
Input Capacitance (Ciss)	13703pF @25V(Vds)
Fall Time	104 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	341W (Tc)
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Size-Length	15.87 mm
Size-Width	5.31 mm
Size-Height	20.7 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFP7530PBF is a HEXFET® N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters.
Fully characterized capacitance including effective COSS to simplify design
Enhanced body diode dV/dt and di/dt capability

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