IRFR3505PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFR3505PBF
Manufacturer

Infineon
ChipWorker Part#

CW70840151
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 55V 71A
Documentation

Datasheet

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IRFR3505PBF Specifications

Attribute	Attribute Value

Part Number	IRFR3505PBF
Manufacturer	Infineon
ChipWorker Part#	CW70840151
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	140 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.013 Ω
Polarity	N-Channel
Power Dissipation	140 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	55 V
Continuous Drain Current (Ids)	71A
Rise Time	74 ns
Input Capacitance (Ciss)	2030pF @25V(Vds)
Input Power (Max)	140 W
Fall Time	54 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	140W (Tc)
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Size-Length	6.73 mm
Size-Width	2.39 mm
Size-Height	6.22 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFR3505PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
Advanced process technology
Repetitive avalanche allowed up to Tjmax
Dynamic dV/dt rating
Fully avalanche rating

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