IRFR5410TRPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFR5410TRPBF
Manufacturer

Infineon
ChipWorker Part#

CW1246700
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK P-CH 100V 13A
Documentation

Datasheet

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IRFR5410TRPBF Specifications

Attribute	Attribute Value

Part Number	IRFR5410TRPBF
Manufacturer	Infineon
ChipWorker Part#	CW1246700
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	66 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.205 Ω
Polarity	P-CH
Power Dissipation	66 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	13A
Rise Time	58 ns
Input Capacitance (Ciss)	760pF @25V(Vds)
Input Power (Max)	66 W
Fall Time	46 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	66W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFR5410TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
Advanced process technology
Fully avalanche rating
Low static drain-to-source ON-resistance
Dynamic dV/dt rating

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