IRFS4127PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFS4127PBF
Manufacturer

Infineon
ChipWorker Part#

CW10041138
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

D2PAK N-CH 200V 72A
Documentation

Datasheet

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IRFS4127PBF Specifications

Attribute	Attribute Value

Part Number	IRFS4127PBF
Manufacturer	Infineon
ChipWorker Part#	CW10041138
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	375 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0186 Ω
Polarity	N-Channel
Power Dissipation	375 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	200 V
Breakdown Voltage (Drain to Source)	200 V
Continuous Drain Current (Ids)	72A
Rise Time	18 ns
Input Capacitance (Ciss)	5380pF @50V(Vds)
Input Power (Max)	375 W
Fall Time	22 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	375W (Tc)
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Size-Length	10.67 mm
Size-Width	6.22 mm
Size-Height	4.83 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFS4127PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and di/dt capability

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