IRG4IBC10UDPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRG4IBC10UDPBF
Manufacturer

Infineon
ChipWorker Part#

CW11270400
Category

IGBT Transistor, IGBT Module
RoHS

Lead free / RoHS Compliant
Description

Trans IGBT Chip N-CH 600V 6.8A 25000mW 3Pin(3+Tab) TO-220 Full-Pak Tube
Documentation

Datasheet

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IRG4IBC10UDPBF Specifications

Attribute	Attribute Value

Part Number	IRG4IBC10UDPBF
Manufacturer	Infineon
ChipWorker Part#	CW11270400
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	25 W
Polarity	N-Channel
Power Dissipation	25 W
Rise Time	16.0 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	28 ns
Input Power (Max)	25 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	25 W
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Size-Length	10.75 mm
Size-Width	4.83 mm
Size-Height	16.13 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

**Co-Pack IGBT up to 20A, Infineon**
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

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