IRG4PC50KDPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRG4PC50KDPBF
Manufacturer

Infineon
ChipWorker Part#

CW6285661
Category

IGBT Transistor, IGBT Module
RoHS

Lead free / RoHS Compliant
Description

IGBT Single Transistor, 52A, 1.84V, 104W, 600V, TO-247AC, 3Pins
Documentation

Datasheet

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IRG4PC50KDPBF Specifications

Attribute	Attribute Value

Part Number	IRG4PC50KDPBF
Manufacturer	Infineon
ChipWorker Part#	CW6285661
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	104 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	104 W
Rise Time	49.0 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	50 ns
Input Power (Max)	200 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200000 mW
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Size-Length	15.9 mm
Size-Width	5.3 mm
Size-Height	20.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The IRG4PC50KDPBF is a 600V Ultrafast 8 to 25kHz copack IGBT with soft recovery diode and short circuit rated. Hard switching process optimized for high operating frequency. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. HEXFRED diodes optimized for performance and used in bridge configurations.

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