IRG4PH30KDPBF - Infineon
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoIRG4PH30KDPBF
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ManufacturerInfineon
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ChipWorker Part#CW11610873
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CategoryIGBT Transistor, IGBT Module
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PackageTO-247-3
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DescriptionTrans IGBT Chip N-CH 1200V 20A 100000mW 3Pin(3+Tab) TO-247AC Tube
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DocumentationDatasheet
Payment Methods and Delivery
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IRG4PH30KDPBF Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | IRG4PH30KDPBF |
| Manufacturer | Infineon |
| ChipWorker Part# | CW11610873 |
| Category | IGBT Transistor, IGBT Module |
| Documentation | Datasheet |
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 100 W |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 100 W |
| Rise Time | 79.0 ns |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 50 ns |
| Input Power (Max) | 100 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 100000 mW |
| expand all | |
| Size-Length | 15.9 mm |
| Size-Width | 5.3 mm |
| Size-Height | 20.3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Bulk |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance Edition | 2015/12/17 |
| ECCN Code | EAR99 |
Product Description
- The IRG4PH30KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. The HEXFRED™ diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses.
- Combines low conduction losses with high switching speed
- Tighter parameter distribution and higher efficiency than previous generations
- IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery anti-parallel diodes
- Latest generation 4 IGBTs offer highest power density motor controls possible
Delivery
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Ordering Information
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