IRG4PSC71UDPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRG4PSC71UDPBF
Manufacturer

Infineon
ChipWorker Part#

CW9826365
Category

IGBT Transistor, IGBT Module
Package

TO-274-3
Description

Trans IGBT Chip N-CH 600V 85A 350000mW 3Pin(3+Tab) TO-274AA Tube
Documentation

Datasheet

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IRG4PSC71UDPBF Specifications

Attribute	Attribute Value

Part Number	IRG4PSC71UDPBF
Manufacturer	Infineon
ChipWorker Part#	CW9826365
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-274-3
Power Rating	350 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	350 W
Rise Time	94.0 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	82 ns
Input Power (Max)	350 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	350000 mW
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Size-Length	15.6 mm
Size-Width	5 mm
Size-Height	20.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRG4PSC71UDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations.
Creepage distance increased to 5.35mm
High efficiency
Maximum power density
Optimized for specific application conditions
HEXFRED™ diodes optimized for performance with IGBTs

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