IRGB10B60KDPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRGB10B60KDPBF
Manufacturer

Infineon
ChipWorker Part#

CW14882826
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

IGBT Single Transistor, 22A, 2.2V, 104W, 600V, TO-220AB, 3Pins
Documentation

Datasheet

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IRGB10B60KDPBF Specifications

Attribute	Attribute Value

Part Number	IRGB10B60KDPBF
Manufacturer	Infineon
ChipWorker Part#	CW14882826
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	104 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	156 W
Rise Time	20.0 ns
Breakdown Voltage (Collector to Emitter)	600 V
Thermal Resistance	0.8℃/W (RθJC)
Reverse recovery time	90 ns
Input Power (Max)	156 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	156000 mW
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Size-Length	10.66 mm
Size-Width	4.69 mm
Size-Height	8.77 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The IRGB10B60KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features low VCE (on) non-punch through IGBT technology and ultra-soft diode reverse recovery characteristics.
Low diode VF
Square RBSOA
Positive VCE (on) temperature coefficient
Rugged transient performance
Low EMI
Excellent current sharing in parallel operation
10µs Short-circuit capability

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