IRGB6B60KDPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRGB6B60KDPBF
Manufacturer

Infineon
ChipWorker Part#

CW12955223
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 600V 18A 90000mW 3Pin(3+Tab) TO-220AB Tube
Documentation

Datasheet

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IRGB6B60KDPBF Specifications

Attribute	Attribute Value

Part Number	IRGB6B60KDPBF
Manufacturer	Infineon
ChipWorker Part#	CW12955223
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	90 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	90 W
Rise Time	17.0 ns
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	70 ns
Input Power (Max)	90 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	90 W
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Size-Length	10.54 mm
Size-Width	4.69 mm
Size-Height	15.24 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRGB6B60KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features low VCE (on) non-punch through IGBT technology and ultra-soft diode reverse recovery characteristics.
Low diode VF
Square RBSOA
Positive VCE (on) temperature coefficient
Rugged transient performance
Low EMI
Excellent current sharing in parallel operation
10µs Short-circuit capability

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