IRGPS66160DPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRGPS66160DPBF
Manufacturer

Infineon
ChipWorker Part#

CW45320171
Category

IGBT Transistor, IGBT Module
Package

TO-274-3
Description

Trans IGBT Chip N-CH 600V 240A 750000mW 3Pin(3+Tab) Super-247 Tube
Documentation

Datasheet

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IRGPS66160DPBF Specifications

Attribute	Attribute Value

Part Number	IRGPS66160DPBF
Manufacturer	Infineon
ChipWorker Part#	CW45320171
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-274-3
Power Dissipation	750 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	95 ns
Input Power (Max)	750 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	750 W
	expand all
Size-Length	16.1 mm
Size-Width	5.5 mm
Size-Height	20.8 mm
Operating Temperature	-40℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Benefits:
Low VCE(ON) and switching losses
Optimized diode for full bridge hard switch converters
Square RBSOA and maximum junction temperature 175°C
5µs short circuit SOA
Positive VCE(ON) temperature coefficient
Lead-free, RoHS compliant

expand all

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