IRL3713SPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRL3713SPBF
Manufacturer

Infineon
ChipWorker Part#

CW13885193
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 30V 260A
Documentation

Datasheet

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IRL3713SPBF Specifications

Attribute	Attribute Value

Part Number	IRL3713SPBF
Manufacturer	Infineon
ChipWorker Part#	CW13885193
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Rating	200 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.003 Ω
Polarity	N-Channel
Power Dissipation	200 W
Threshold Voltage	2.5 V
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	260A
Input Capacitance (Ciss)	5890pF @15V(Vds)
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	330W (Tc)
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Size-Length	10.67 mm
Size-Width	9.65 mm
Size-Height	4.83 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRL3713SPBF is a HEXFET® N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency isolated DC-to-DC converter with synchronous rectification for telecom use.
Ultra-low gate impedance
Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
Fully avalanche rating
Logic level

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