IRLB3034PBF - Infineon
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoIRLB3034PBF
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ManufacturerInfineon
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ChipWorker Part#CW1366353
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CategoryMOSFET, MOSFET Transistor
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PackageTO-220-3
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DescriptionTO-220AB N-CH 40V 343A
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DocumentationDatasheet
Payment Methods and Delivery
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IRLB3034PBF Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | IRLB3034PBF |
| Manufacturer | Infineon |
| ChipWorker Part# | CW1366353 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 375 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0014 Ω |
| Polarity | N-CH |
| Power Dissipation | 375 W |
| Threshold Voltage | 2.5 V |
| Input Capacitance | 10315pF @25V |
| Drain to Source Voltage (Vds) | 40 V |
| Breakdown Voltage (Drain to Source) | 40 V |
| Continuous Drain Current (Ids) | 343A |
| Rise Time | 827 ns |
| Input Capacitance (Ciss) | 10315pF @25V(Vds) |
| Input Power (Max) | 375 W |
| Fall Time | 355 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 375W (Tc) |
| expand all | |
| Size-Length | 10 mm |
| Size-Width | 4.4 mm |
| Size-Height | 15.65 mm |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tube |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance Edition | 2015/12/17 |
Product Description
- The IRLB3034PBF from International Rectifier is 40V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, DC motor drive, hard switched and high frequency circuits.
- Enhanced body diode dV/dt and dI/dt capability
- Fully characterized capacitance and avalanche SOA
- Very low Rds(on) at 4.5V Vgs
- Superior RxQ at 4.5V VGS
- Optimized for logic level drive
- Drain to source voltage (Vds) of 40V
- Gate to source voltage of ±20V
- On resistance Rds(on) of 1.4mohm at Vgs 10V
- Power dissipation Pd of 375W at 25°C
- Operating junction temperature range from -55°C to 175°C
Delivery
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Ordering Information
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