IRLP3034PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLP3034PBF
Manufacturer

Infineon
ChipWorker Part#

CW11973765
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247AC N-CH 40V 327A
Documentation

Datasheet

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IRLP3034PBF Specifications

Attribute	Attribute Value

Part Number	IRLP3034PBF
Manufacturer	Infineon
ChipWorker Part#	CW11973765
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	341 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0014 Ω
Polarity	N-Channel
Power Dissipation	341 W
Threshold Voltage	2.5 V
Drain to Source Voltage (Vds)	40 V
Continuous Drain Current (Ids)	327A
Rise Time	827 ns
Input Capacitance (Ciss)	10315pF @25V(Vds)
Input Power (Max)	341 W
Fall Time	355 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	341W (Tc)
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Size-Length	15.87 mm
Size-Width	5.31 mm
Size-Height	20.7 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRLP3034PBF is a HEXFET® N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is optimized for logic level drive. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
Very low RDS (ON) at 4.5V VGS
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and di/dt capability

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